Multilevel interconnection structure for semiconductor devices

Details Multilevel interconnection structure for semiconductor devices Multilevel interconnection structure for semiconductor devices

1996-01-25

1998-08-11

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257763, 257765, 257767, H01L 2348, H01L 2352, H01L 2940

Patent

active

057931135

ABSTRACT:
The present invention provides a novel interconnection structure which comprises an insulation layer having a contact hole which extends in a first vertical direction, a contact layer residing within the contact hole and being made of a first conductive material which has a first electromigration resistance, and an interconnection layer extending within the insulation layer. The interconnection layer has one end portion which is in contact with one end of the contact layer. The interconnection layer is made of a second conductive material having a second electromigration resistance which is smaller than the first electromigration resistance. The interconnection layer has a reservoir portion which is made of the second conductive material. The reservoir portion extends within the insulation layer and extends from the one end portion of the interconnection layer in a second vertical direction which is opposite to the first vertical direction.

REFERENCES:
patent: 5281850 (1994-01-01), Kanamori
patent: 5416359 (1995-05-01), Oda
H. Rathore et al., "Electromigration and Current-Carrying Implications for Aluminum-Based Metallurgy with Tungsten Stud-Via Interconnections", Sibmicrometer Metallization, 1992, vol. 1805, pp. 251-262, No Month.

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