Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-09-18
1998-08-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257762, 257760, 257763, 257764, H01L 2348, H01L 2352, H01L 2940
Patent
active
057931127
ABSTRACT:
The multilevel embedded wiring system for an IC has a capping layer on the conductive layer in channels or trenches in insulating layers. The capping layer prevents halation of light in a lithography process, resulting in a high precision structure. Even if Cu is used as the conductive material, the resulting wiring resistivity is still low and the diffusion and oxidation of Cu are prevented.
REFERENCES:
patent: 4916397 (1990-04-01), Masuda et al.
patent: 4933743 (1990-06-01), Thomas et al.
patent: 5008730 (1991-04-01), Huang et al.
patent: 5262354 (1993-11-01), Cote et al.
patent: 5374849 (1994-12-01), Tada
patent: 5391906 (1995-02-01), Natsume
patent: 5442235 (1995-08-01), Parrillo et al.
patent: 5592024 (1997-01-01), Aoyama et al.
Fukada Tetsuo
Hasegawa Makiko
Mori Takeshi
Toyoda Yoshihiko
Cao Phat X.
Crane Sara W.
Mitsubishi Denki & Kabushiki Kaisha
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