Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-11-20
1998-09-01
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257742, 257743, 257744, 257745, H01L 2348
Patent
active
058014446
ABSTRACT:
A low temperature annealed Cu silicide or germanide layer on the surface of a single crystalline semiconductor substrate of Si or Ge is used in interconnection metallization for integrated circuits. The Cu silicide or germanide layer is preferably formed by heating Cu deposited on a Si or Ge substrate up to about 200.degree. C. for about 30 minutes. The layer demonstrates superior (near ideal) current/voltage characteristics and can be used as a high temperature (600-800.degree. C.) stable Ohmic/Schottky contact to Si or as a Cu diffusion barrier. Additional embodiments involve a Cu layer on a Ge layer on Si substrate, a Cu layer on a Si.sub.x Ge.sub.1-x layer on a substrate, and the use of an intermediate layer of a refractory metal such as W.
REFERENCES:
Thompson et al., "Low temperature getting of Cu,Ag and An across a wafer of Si by Al", Appl. Phys. Lett. 41(5), 1 Sep. 1982 pp. 440-442.
Cros et al, "Formation, oxidation, electronic and electrical properties of copper silicides", J. Appl. Phys. 67(7), 1 Apr. 1990, pp. 3328-3336.
Hu et al., "Diffusion barriers for Cu", IBM Tech. Disc. Bull. vol. 29, No. 3, Aug. 1986, pp. 1395-1396.
Aboelfotoh Mohamed Osama
Krusin-Elbaum Lia
Sun Yuan-Chen
International Business Machines - Corporation
Morris Daniel P.
Whitehead Carl W.
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