Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-01-16
2007-01-16
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23062, C257S701000, C257S211000, C257S203000, C257S208000, C257S774000, C257S758000, C257S698000, C257S704000, C257S707000, C257S680000, C257S712000, C257S737000, C257S778000
Reexamination Certificate
active
10649745
ABSTRACT:
A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.
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Aratani Hironari
Chino Takeshi
Kodaira Tadashi
Matsumoto Shun-ichiro
Nakamura Jyunichi
Morgan & Lewis & Bockius, LLP
Shinko Electric Industres, Co., Ltd.
Williams Alexander Oscar
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