Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2007-09-11
2007-09-11
Potter, Roy (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S458000
Reexamination Certificate
active
11219647
ABSTRACT:
The productivity of a multilayered structure etc. is improved by easily forming insulating films for insulating internal electrode layers from side electrodes. The multilayered structure includes: a first internal electrode layer including a first conducting material extending to a first side surface of the multilayered structure and having magnetism at a predetermined temperature and a second conducting material extending to a second side surface of the multilayered structure and having no magnetism at the predetermined temperature; a dielectric layer formed on the first internal electrode layer; a second internal electrode layer including the second conducting material extending to the first side surface and the first conducting material extending to the second side surface; a first insulating film formed on the first internal electrode layer in the first side surface; and a second insulating film formed on the second internal electrode layer in the second side surface.
REFERENCES:
patent: 61-32835 (1986-07-01), None
Fujifilm Corporation
Potter Roy
Sughrue & Mion, PLLC
LandOfFree
Multilayered structure, multilayered structure array and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multilayered structure, multilayered structure array and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayered structure, multilayered structure array and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3750097