Multilayered lead frame for a semiconductor light-emitting...

Details Multilayered lead frame for a semiconductor light-emitting... Multilayered lead frame for a semiconductor light-emitting...

2011-08-09

2011-08-09

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

Of specified material other than copper

C257S666000, C257SE23054

Reexamination Certificate

active

07994616

ABSTRACT:
A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.

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