Multilayered A1-alloy structure for metal conductors

Details Multilayered A1-alloy structure for metal conductors Multilayered A1-alloy structure for metal conductors

1996-06-26

1997-06-24

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257765, 257751, 257763, 257758, H01L 2348, H01L 2352, H01L 2940

Patent

active

056419945

ABSTRACT:
A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems.

REFERENCES:
patent: 4673623 (1987-06-01), Gardner et al.
patent: 4910580 (1990-03-01), Kuecher et al.
patent: 5360995 (1994-11-01), Graas
patent: 5427666 (1995-06-01), Mueller et al.
patent: 5523259 (1996-06-01), Merchant et al.
patent: 5552341 (1996-09-01), Lee

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