Multilayer ZnO polycrystalline diode

Details Multilayer ZnO polycrystalline diode Multilayer ZnO polycrystalline diode

1998-11-13

2001-11-13

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

C257S599000, C257S653000

Reexamination Certificate

active

06316819

ABSTRACT:

BACKGROUND OF THE INVENTION
Brief Summary of the Invention
A multilayer ZnO polycrystalline diode that protects against electrostatic discharges, over-current, and voltage surges overcoming the aforementioned drawbacks is provided. The present invention further includes a polycrystalline system formed by a network of elementary ZnO diodes; each elementary ZnO diode comprises at least one ZnO grain and a balance layer of Bi
2
O
3
. The balance layer of Bi
2
O
3
is configured surrounding the at least one ZnO grain and the polycrystalline system is formed into a plurality of layers.


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patent: 0 189 987-A1 (1986-01-01), None
Dalay, U, et al., “Excess Capacitance of Zn)-Au Varactors,” Applied Physics A, 42, 2490255 (1987).

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