Multilayer wiring structure, semiconductor device, pattern...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE23070, C174S261000

Reexamination Certificate

active

07999392

ABSTRACT:
A multilayer interconnection structure according to this invention is applied to a case where a plurality of interconnections are formed at a fine pitch and a via is connected to at least one of the interconnections. In the multilayer interconnection structure, a region facing the via is locally narrowed in at least the interconnection, facing the via, of the interconnections adjacent to the interconnection connected to the via.

REFERENCES:
patent: 6163067 (2000-12-01), Inohara et al.
patent: 7238619 (2007-07-01), Zhou et al.
patent: 7486525 (2009-02-01), Knickerbocker
patent: 7495340 (2009-02-01), Kim
patent: 57-050448 (1982-03-01), None
patent: 4-085933 (1992-03-01), None
patent: 2002-110644 (2002-04-01), None
patent: 2003-173013 (2003-06-01), None
patent: 2003-197738 (2003-07-01), None
patent: 2003-297920 (2003-10-01), None
patent: 2004-095902 (2004-03-01), None
patent: 2004-144975 (2004-05-01), None
patent: 1020040039593 (2004-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multilayer wiring structure, semiconductor device, pattern... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer wiring structure, semiconductor device, pattern..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer wiring structure, semiconductor device, pattern... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2644458

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.