Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1993-09-16
1994-12-13
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257579, 257584, H01L 2970, H01L 2952, H01L 2954
Patent
active
053731859
ABSTRACT:
A vertical type construction transistor of this invention includes: a semiconductor substrate; a semiconductor multilayer formed on the semiconductor substrate, the semiconductor multilayer including at least an emitter layer, a collector layer, and a base layer; a first electrode electrically connected to the base layer; a second electrode electrically connected to one of the emitter layer and the collector layer; a third electrode formed on the semiconductor multilayer, and electrically connected to the other of the emitter layer and the collector layer, the third electrode being extended in a first direction; an insulating film formed substantially over the semiconductor multilayer; and an overlay electrode at least partially formed on the insulating film, the overlay electrode being electrically connected to the third electrode, at least partially formed on the insulating film, and extending out in a direction normal to the first direction so as to be in partial contact with the semiconductor substrate, the overlay electrode having a width substantially similar to the length of the third electrode in the first direction.
REFERENCES:
patent: 4918514 (1990-04-01), Matsuda
patent: 5084750 (1992-01-01), Adlerstein
patent: 5097312 (1992-03-01), Bayraktaroglu
Sheng et al., High Power GaAlAs/GaAs HBTs For Microwave Applications, IEDM Digest 1987 pp. 619-622.
Wargin, Dr. et al. Microwave Bipolar Linear Power Transistors Communications International (GB), vol. 6, No. 9, Sept. 1979, pp. 20-24.
Sato et al.; Technical Research Report ED 90-135; Jan./1991; "Carbon-Doped AlGaAs/GaAs HBTs . . . "; pp. 19-24 (partial English translation).
Mishra et al.; IEDM 88 Technical Digest; Dec./1988; "48 GH.sub.z AllnAs/GalnAs Heterojunction . . . "; pp. 873-875.
Prasad et al.; GaAs IC Symposium; 1991; "A 45 GH.sub.z AlGaAs/GaAs HBT IC Technology"; pp. 121-124.
Brown Peter Toby
Hille Rolf
Sharp Kabushiki Kaisha
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