Multilayer system comprising a diamond layer, an interphase and

Details Multilayer system comprising a diamond layer, an interphase and Multilayer system comprising a diamond layer, an interphase and

1996-02-06

1998-09-15

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 117101, 117929, 423446, C30B 2904

Patent

active

058074333

ABSTRACT:
The present invention concerns a novel multilayer system comprising a diamond layer, and the method of manufacturing this multilayer system.
The invention concerns a multilayer system comprising a metallic substrate, an interphase and a diamond layer, the interphase being composed of the product of thermal decomposition of at least one metallocene compound.
This multilayer system, capable of being used as an electrode, has improved adhesion between the substrate and the diamond layer.

REFERENCES:
patent: 4740263 (1988-04-01), Imai et al.
patent: 5009966 (1991-04-01), Garg et al.
patent: 5399247 (1995-03-01), Carey et al.
Ping et al., "Studies of Structure of Transition Layers Between Diamond Film, . . . ", Int. Conf. Appl. Diamond Films, Relat. Mat. 2nd (1993) abs only.
Vyshinskaya et al., Inorganic Materials, vol. 12, No. 12, Dec. 1976, US pp. 1771-1772, "Deposition of Titanium Carbide From the Gas Phase During Pyrolysis of Cyclopentadienyl Compounds of Titanium".

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