Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-07-16
1999-08-17
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257759, 257762, 257741, 257792, 257774, 257753, H01L 23485
Patent
active
059397896
ABSTRACT:
A multilayer substrate which is fabricated by laminating a plurality of substrates, each comprising an insulation film, a plurality of via holes which pass through the upper surface to the lower surface of the insulation film, a wiring which is provided on the upper surface of the insulation film and the upper surface of the via holes and electrically connected with the via holes, a bonding member which is provided on the lower surfaces of the via holes and electrically connected with the via holes, and a bonding layer which is provided on the upper surface of the insulation film where the wiring is formed and the method of fabrication thereof whereby large costs reduction and high density effect can be obtained.
REFERENCES:
patent: 5309629 (1994-05-01), Traskos et al.
patent: 5451804 (1995-09-01), Lur et al.
Tummala et al., "Micro Electronics Packaging Handbook", Nikkei BP Co., Ltd., Mar. 1991, pp. 382, 554, 562 and 684.
Inoue Takashi
Ishino Masakazu
Kawai Michifumi
Kyoui Masayuki
Matsuda Eiji
Hardy David B.
Hitachi , Ltd.
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