Multilayer structured semiconductor devices

Details Multilayer structured semiconductor devices Multilayer structured semiconductor devices

1996-09-12

1998-07-28

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 15, 257101, 257103, H01L12906, H01L 310328, H01L 310336, H01L 31072

Patent

active

057866031

ABSTRACT:
At an n--n hetero-interface in a ZnSe-based or GaN-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A single or plurality of n-type intermediate layers are provided in the n--n hetero-interface region where the excessive voltage drop develops. The excessive voltage drop developing at the n--n hetero-interface is decreased by setting the energy value at the edge of the conduction band of each intermediate layer to a mid-value between the energy values at the edges of the conduction bands of the n-type compound semiconductors adjoining both sides of the intermediate layer. The configuration of a GaN-based MQW laser including the intermediate layer formed on sapphire substrate is shown. The relationship between the lattice constant of an intermediate layer necessary for obtaining an intermediate layer excellent in crystallinity suitable for the above object and the lattice constants of compound semiconductors adjoining both sides of the intermediate layer is described.

REFERENCES:
patent: 5428227 (1995-06-01), Satoh
patent: 5442204 (1995-08-01), Mensz
patent: 5521396 (1996-05-01), Shakuda
patent: 5548137 (1996-08-01), Fan et al.
patent: 5585306 (1996-12-01), Miyazawa
patent: 5585648 (1996-12-01), Tischler

Affiliated with

Also associated with

Rating

Multilayer structured semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer structured semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer structured semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-25254