Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2011-07-12
2011-07-12
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S030000, C257S032000, C257S035000
Reexamination Certificate
active
07977668
ABSTRACT:
A multilayer structure with zirconium-oxide tunnel barriers. In one embodiment, the multilayer structure includes a first niobium (Nb) layer, a second niobium (Nb) layer, and a plurality of zirconium-oxide tunnel barriers sandwiched between the first niobium (Nb) layer and the second niobium (Nb) layer, wherein the plurality of zirconium-oxide tunnel barriers is formed with N layers of zirconium-oxide, N being an integer greater than 1, and M layers of zirconium, M being an integer no less than N, such that between any two neighboring layers of zirconium-oxide, a layer of zirconium is sandwiched therebetween.
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Chernyashevskyy Oleksandr
Ketterson John
Nevirkovets Ivan
Shafraniuk Serhii
Morris Manning & Martin LLP
Northwestern University
Tingkang Xia, Esq. Tim
Wojciechowicz Edward
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