Multilayer structure having an epitaxial metal electrode

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428446, 428472, 428697, 428698, 428699, 428701, 428702, 428704, B32B 300, H01B 312

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053874595

ABSTRACT:
A multilayer structure comprising in order: an oriented single crystal substrate, an epitaxial buffer layer, an epitaxial metal electrode, and an epitaxial metal oxide upper layer deposited on the metal electrode. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb.

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