Multilayer structure and fabrication thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S201000, C257S347000, C257S615000, C257S616000, C257S189000, C257SE21320, C257SE21545, C438S479000, C438S763000, C438S933000

Reexamination Certificate

active

07863650

ABSTRACT:
A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate by epitaxial growth, forming at least one pattern from the growth layer, depositing an oxide layer on the silicon substrate, transferring a silicon active layer onto the oxide layer, forming a cavity in the silicon active layer oxide layer above the pattern, and growing a III-V material in the cavity.

REFERENCES:
patent: 3914137 (1975-10-01), Huffman et al.
patent: 5108947 (1992-04-01), Demeester et al.
patent: 5286985 (1994-02-01), Taddiken
patent: 6645829 (2003-11-01), Fitzergald
patent: 6677655 (2004-01-01), Fitzergald
patent: 6730943 (2004-05-01), Massies et al.
patent: 2003/0136333 (2003-07-01), Semond et al.
patent: 2004/0012037 (2004-01-01), Venkatesan et al.
patent: 2004/0232428 (2004-11-01), Senda et al.
patent: 2004/0252931 (2004-12-01), Belleville et al.
patent: 0306153 (1989-03-01), None
patent: WO-0213342 (2002-02-01), None
patent: WO-2008099246 (2008-08-01), None
Material and Optical Properties of GaAs Grown on (001) Ge/Si Pseudo-Substrate; Mat. Res. Soc. Symp. Proc. vol. 809; Copyright 2004 Materials Research Society.
High-Quality Ge Epilayers on Si with Low Threading-Dislocation Densities; Applied Physics Letters; vol. 75, No. 19; Nov. 8, 1999.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multilayer structure and fabrication thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer structure and fabrication thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer structure and fabrication thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2649244

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.