Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2011-01-04
2011-01-04
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S201000, C257S347000, C257S615000, C257S616000, C257S189000, C257SE21320, C257SE21545, C438S479000, C438S763000, C438S933000
Reexamination Certificate
active
07863650
ABSTRACT:
A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate by epitaxial growth, forming at least one pattern from the growth layer, depositing an oxide layer on the silicon substrate, transferring a silicon active layer onto the oxide layer, forming a cavity in the silicon active layer oxide layer above the pattern, and growing a III-V material in the cavity.
REFERENCES:
patent: 3914137 (1975-10-01), Huffman et al.
patent: 5108947 (1992-04-01), Demeester et al.
patent: 5286985 (1994-02-01), Taddiken
patent: 6645829 (2003-11-01), Fitzergald
patent: 6677655 (2004-01-01), Fitzergald
patent: 6730943 (2004-05-01), Massies et al.
patent: 2003/0136333 (2003-07-01), Semond et al.
patent: 2004/0012037 (2004-01-01), Venkatesan et al.
patent: 2004/0232428 (2004-11-01), Senda et al.
patent: 2004/0252931 (2004-12-01), Belleville et al.
patent: 0306153 (1989-03-01), None
patent: WO-0213342 (2002-02-01), None
patent: WO-2008099246 (2008-08-01), None
Material and Optical Properties of GaAs Grown on (001) Ge/Si Pseudo-Substrate; Mat. Res. Soc. Symp. Proc. vol. 809; Copyright 2004 Materials Research Society.
High-Quality Ge Epilayers on Si with Low Threading-Dislocation Densities; Applied Physics Letters; vol. 75, No. 19; Nov. 8, 1999.
Edwards Angell Palmer & & Dodge LLP
Ho Tu-Tu V
S.O.I. TEC Silicon on Insulator Technologies
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