Multilayer stack with compensated resonant circuit

Details Multilayer stack with compensated resonant circuit Multilayer stack with compensated resonant circuit

2004-03-17

2008-12-30

Lee, Benny (Department: 2817)

Wave transmission lines and networks

Coupling networks

Frequency domain filters utilizing only lumped parameters

C333S219000

Reexamination Certificate

active

07471170

ABSTRACT:
A metallization structure in a multilayer stack, which is arranged at a distance from a ground electrode, is characterized in that the metallization structure has a capacitor electrode and a line that acts as a coil, where the capacitor electrode and the line are arranged in a common plane which lies parallel with the ground electrode at a distance h1, and in that formula (I) where w is the width of the line.

REFERENCES:
patent: 4352076 (1982-09-01), Saitoh et al.
patent: 5124675 (1992-06-01), Komazaki et al.
patent: 5374909 (1994-12-01), Hirai et al.

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