Multilayer semiconductor switching devices

Details Multilayer semiconductor switching devices Multilayer semiconductor switching devices

1976-09-20

1980-02-26

Clawson, Jr., Joseph E.

357 55, 357 86, H01L 29747

Patent

active

041908538

ABSTRACT:
The specification discloses semiconductor switching devices having more than five layers of alternating semiconductor conductivity types and which do not utilize substantial lateral switching currents during the operation thereof. Ones of the exterior layers of the devices are heavily doped. In one embodiment of the invention, an asymmetrical regenerative semiconductor switch is disclosed which operates in the general manner of a silicon controlled rectifier but which includes two blocking junctions therein. In another embodiment of the invention, a semiconductor switching device having symmetrical switching operation is disclosed.

REFERENCES:
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3681667 (1972-08-01), Kokosa
A. Lebedev, "Analysis of Processes in Multilayer Semiconductor Structures of the N-P-N-P-N-P Type," Physics of P-N Junctions and Semiconductor Devices, 2nd ed., London, Eng., 1971, pp. 321-329.

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