Multilayer semiconductor integrated circuit

Details Multilayer semiconductor integrated circuit Multilayer semiconductor integrated circuit

1990-10-11

1991-08-20

Wojciechowicz, Edward J.

357 235, 357 237, 357 41, 357 59, 357 68, 357 55, H01L 2978

Patent

active

050418840

ABSTRACT:
The inventive multilayer semiconductor integrated circuit has a columnar semiconductor region provided between adjacent two layers and a control electrode provided in the vicinity of the columnar semiconductor region. The transference of a signal between the adjacent two layers is carried out through the columnar semiconductor region the electric conductivity of which is controlled by a control signal applied to the control electrode. That is, the area corresponding to the columnar semiconductor region functions as an active element.

REFERENCES:
patent: 4929988 (1990-05-01), Yoshikawa
"A Trench Transistor Cross-Point DRAM Cell": 1985, IEDM 29.6; pp. 714-717; W. F. Richardson, etc. (Brochure).

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