Multilayer semiconductor element

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 68, H01L 2974

Patent

active

042988829

ABSTRACT:
A multilayer semiconductor element with improved dynamic electric parameters obtained by a suitable geometric arrangement of the control zone and by the use of a controlled emitter.

REFERENCES:
patent: 4060825 (1977-11-01), Schlegel
patent: 4079406 (1978-03-01), Burtscher
patent: 4210924 (1980-07-01), Akabove

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multilayer semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer semiconductor element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1067208

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.