Multilayer semiconductor device having multiple paths of current

Details Multilayer semiconductor device having multiple paths of current Multilayer semiconductor device having multiple paths of current

1988-07-07

1989-11-21

Edlow, Martin H.

357 16, H01L 2980

Patent

active

048826081

ABSTRACT:
A multilayer semiconductor structure is disclosed having a plurality of conducting layers separated by a barrier layer. A common contact extends from an upper exposed surface to all the layers of the device and a surface contact extends from the upper surface into an uppermost conducting layer. Each of the conducting layers defines an independent channel of current flow thereby providing at least two independent current paths between the common contact and the surface contact. A Schottky barrier electrode is disposed on the surface of the structure between the common and surface contacts and is operable to selectively deplete charge carriers within the conducting layers sequentially to cause current to flow through the desired channel. The current flow in each channel results in an independent I/V characteristic curve in which one channel is linear and the other channel is non-linear.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4455564 (1984-06-01), Delagebeaudeuf et al.
patent: 4471367 (1984-09-01), Chen et al.
patent: 4558337 (1985-12-01), Saunier
patent: 4688061 (1987-08-01), Sakaki
patent: 4755857 (1988-07-01), Abstreiter
patent: 4806998 (1989-02-01), Vinter
Bonnefoi et al., Resonant Tunneling Transistors with Controllable Negative Differential Resistance, IEEE Electron Device Letters, vol. 6, No. 12, Dec. 1985.
N. Cirillo, et al., Self-Aligned Modulation-Doped (Al,Ga) As/GaAs Field Effect Transistors, Electron Device Letters.
R. Thorne, et al., Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect Transistors, Japanese Journal of Applied Physics, vol. 21, No. 4, Apr. 1982.
Woodward et al., Experimental Realization of a Resonant Tunneling Transistor, General Physics Advance Abstracts, vol. 3, No. 3, Feb. 1987.
S. Long et al., High Speed GaAs Integrated Circuits, IEEE Proceedings, vol. 70, No. 1, Jan. 1982.
R. Fischer et al., New High-Speed (Al,Ga) as Modulation Doped Field-Effect Transistors, IEEE Circuits and Devices Magazine, Jul. 1985.
S. Lee et al., Parasitic Source and Drain Resistance in High-Electron-Mobility Transistors, Solid-State Electronics, vol. 28, No. 7, 1985.

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