Multilayer semiconductor device having an amorphous carbon and s

Details Multilayer semiconductor device having an amorphous carbon and s Multilayer semiconductor device having an amorphous carbon and s

1986-10-02

1988-08-30

Davie, James W.

357 2, 357 30, 357 59, H01L 2714

Patent

active

047680725

ABSTRACT:
In the typical embodiments of the invention described in the specification, a radiation detector has a single crystal silicon substrate coated with an amorphous semiconductor film containing silicon and carbon, metal electrodes being provided. Amorphous layers are formed by a plasma CVD method using mixtures of monosilane gas and acetylene or tetrafluorocarbon gas at a pressure of 10 Torr with an applied voltage of 400-800 volts providing increased band gaps and higher resistivity to reduce current leakage.

REFERENCES:
patent: 4342044 (1982-07-01), Ovshinsky et al.
patent: 4524237 (1985-06-01), Ross et al.
patent: 4555464 (1985-11-01), Kido et al.
Norde, H. et al., Behavior of amorphous Ge contacts to monocrystalline silicon, Pergamon Press, vol. 27, No. 3, pp. 201-208, (1977).

Affiliated with

Also associated with

Rating

Multilayer semiconductor device having an amorphous carbon and s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer semiconductor device having an amorphous carbon and s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer semiconductor device having an amorphous carbon and s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2091688