Multilayer ohmic contact for p-type semiconductor and method of

Details Multilayer ohmic contact for p-type semiconductor and method of Multilayer ohmic contact for p-type semiconductor and method of

1984-12-28

1987-07-14

James, Andrew J.

357 65, 357 61, 357 16, 357 30, 357 4, H01L 2348

Patent

active

046806113

ABSTRACT:
Novel ohmic contacts are provided for p-type semiconductor compounds comprising at least one of the metals of Class IIB of the Periodic Table of Elements and one of the non-metal elements of Class VIA of the Periodic Table of Elements, as well as a method for forming such novel ohmic contacts. These ohmic contacts comprise a multilayer metal contact wherein the first layer provides a lasting stable contact with the p-type semiconductor; the additional layers provide the necessary electrical conductivity for the contact to be efficient.

REFERENCES:
patent: 3268309 (1966-08-01), Frank et al.
patent: 3370207 (1968-02-01), Fabel et al.
patent: 3465428 (1969-09-01), Spriggs et al.
patent: 4000508 (1976-12-01), Hager et al.
patent: 4065781 (1977-12-01), Gutknecht
patent: 4085500 (1978-04-01), Hager et al.
patent: 4388483 (1983-06-01), Basol et al.
patent: 4456630 (1984-06-01), Basol
Boer et al., "P-Type Photoelectric Behavior in CdS Dominated by a High-Resistivity Regin near the Anode," Physical Review, vol. 154, No. 3, Feb. 67, pp. 757-762.

Affiliated with

Also associated with

Rating

Multilayer ohmic contact for p-type semiconductor and method of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer ohmic contact for p-type semiconductor and method of , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer ohmic contact for p-type semiconductor and method of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1430483