Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1993-06-10
1994-11-29
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257768, 257770, 257763, 257767, H01L 2348, H01L 2946, H01L 2962, H01L 2964
Patent
active
053693000
ABSTRACT:
A semiconductor device aluminum-containing metallization system that is particularly useful for integrated circuits (ICs) having P-type contact regions and also having a likelihood of extended exposure to elevated temperatures. Use of an aluminum/silicon diffusion barrier formed of an amorphous tungsten/silicon on such ICs is made commercially practical. A titanium or transition metal silicide layer is disposed beneath the amorphous tungsten/silicon layer, to consistently provide durable low resistance electrical contacts to P-type regions of the IC.
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Baird Michael S.
Heideman Robert J.
Rusch Randy A.
Brooks Cary W.
Clark S. V.
Delco Electronics Corporation
Funke Jimmy L.
James Andrew J.
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