Multilayer metal structure of supply rings with large...

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means

Reexamination Certificate

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Details

C257S208000, C257S209000, C257S210000, C257S758000

Reexamination Certificate

active

10456940

ABSTRACT:
A multilayer metal supply rings structure of an integrated circuit comprises at least two parallel perimetral metal rails defined in metal layers of different levels, geometrically superposed one to the other. Each rail is constituted by using definition juxtaposed modules, each module defining on a metal layer parallel segments, longitudinally separated by a separation cut, of each rail, superposed rails of said multilayer structure constituting one supply node being electrically interconnected through a plurality of interconnection vias through dielectric isolation layers between different metal levels. A feature of the multilayer metal supply rings structure is that the segments of each of said perimetral metal rails modularly defined on each metal level belong alternately to one and another supply node upon changing the metal level. A process of defining a multilayer metal supply rings structure is also disclosed.

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