Multilayer lead frame structure that reduces cross-talk and semi

Details Multilayer lead frame structure that reduces cross-talk and semi Multilayer lead frame structure that reduces cross-talk and semi

1998-04-14

2000-07-25

Williams, Alexander O.

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

257728, 257528, 257532, 257531, 257700, 257691, 257676, 257698, 257787, 257692, 174 522, 174 524, H01L 2352, H01L 2348, H01L 23495, H05K 720

Patent

active

060939575

ABSTRACT:
A lead frame structure and semiconductor package using the same and fabrication method thereof is provided that decreases noise by providing prescribed impedances for leads of a lead frame. The lead frame structure for the semiconductor package includes a paddle, a plurality of leads regularly aligned outside the paddle, and upper and lower dielectric adhesive layers sandwiching the plurality of leads. Upper and lower dielectric layers are attached on an upper surface of the upper dielectric adhesive layer and a lower surface of the lower dielectric adhesive layer. Upper and lower metallic polar plates formed on an upper surface of the upper dielectric layer and a lower surface of the lower dielectric layer. The lead frame structure for the semiconductor package decreases noises such as electromagnetic noise, reflection noise and delta-I noise by appropriately providing characteristic impedances for selected leads applicable to signal lines and at the same time decreasing characteristic impedances for the selected leads applicable to power lines or ground lines.

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patent: 5905634 (1999-05-01), Takeda et al.

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