Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1992-04-20
1994-05-17
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257767, 257765, 257915, H01L 29400, H01L 29460
Patent
active
053131002
ABSTRACT:
An aluminum interconnection film has a three layered structure of an aluminum alloy film, a tungsten film, and a titanium nitride film. An aluminum interconnection film and an aluminum interconnection film are electrically connected through a through hole formed in a silicon oxide film. Because light reflectivity of the titanium nitride film is low, the exposed area of the resist can be kept within a predetermined area even if photolithography is carried out above a step where light is irregularly reflected. Therefore, it is possible to form a through hole of a desired dimension even if the through hole is formed above the step. Even if the titanium nitride film is etched and removed in forming the through hole, the aluminum alloy film is not exposed since the etching speed of the silicon oxide film is considerably slower than that of the tungsten film. The problem of denatured layer formation and residue formation caused by exposure of aluminum alloy film does not occur.
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Abstract Citation, Rodbell et al., Abstract for "Electromigration Behavior in Layered Ti/AlCu/Ti Films and Its Dependence on Intermetallic Structure", Publication Appears in Materials Reliability issues in Microelectronics Symposium, Mater. Res. Soc., 1991.
"A Highly Reliable Multilevel Interconnection Process for 0.6.mu.m CMOS Devices" by Y. Takata et al., 8th Int. VLSI Multi-Level Interconnection Conference, Santa Clara, Calif., USA, Jun. 11, 12, 1991, 7 pages.
Ishii Atsushi
Maekawa Kazuyoshi
Ohsaki Akihiko
Takata Yoshifumi
Brown Peter Toby
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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