Multilayer interconnection for integrated circuit structure havi

Details Multilayer interconnection for integrated circuit structure havi Multilayer interconnection for integrated circuit structure havi

1987-01-22

1988-11-01

Edlow, Martin H.

357 65, 357 67, 357 68, H01L 2348

Patent

active

047823801

ABSTRACT:
Construction of a novel multilayer conductive interconnection for an integrated circuit having more than one conductive layer is disclosed comprising a lower barrier layer which may be in contact with an underlying silicon substrate and comprising a material selected from the class consisting of TiW and TiN; an intermediate layer of conductive metal such as an aluminum base metal; and an upper barrier layer which may be in contact with a second aluminum base metal layer and which is selected from the class consisting of TiW, TiN, MoSi.sub.x and TaSi where x equals 2 or more.

REFERENCES:
patent: 3879746 (1975-04-01), Fournier
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4361599 (1982-01-01), Wourms
patent: 4609935 (1986-09-01), Kondo
patent: 4659427 (1987-04-01), Barry et al.

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