Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-09-14
1995-09-26
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257762, H01L 2348, H01L 2946, H01L 2962, H01L 2964
Patent
active
054536421
ABSTRACT:
The invention provides a multilayer laminar interconnect package comprising a plurality of conductor circuit layers adhering to and sandwiched between a plurality of dielectric polyimide polymer layers where the conductor circuit layers are a circuit pattern of lines of conductive metal. The conductive metal, e.g. copper, is coated with a capping layer of a metal, e.g. cobalt, which capping layer is further characterized as having a thin layer of the capping metal oxide adhered to the surface thereof. The conductive layer is in contact with an overcoated polyimide dielectric layer such that the surface oxidized capping layer forms an adherent barrier layer at the interface of the polyimide and conductive line layers. The invention also provides a process for producing such interconnect packages.
REFERENCES:
patent: 4561009 (1985-12-01), Yonezawa et al.
patent: 4896204 (1990-01-01), Hirata et al.
Kaja Suryanarayana
O'Sullivan Eugene J.
Schrott Alejandro G.
Blecker Ira D.
Clark S. V.
Crane Sara W.
International Business Machines - Corporation
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