Multilayer insulating film of semiconductor device and method fo

Details Multilayer insulating film of semiconductor device and method fo Multilayer insulating film of semiconductor device and method fo

1994-10-17

1996-04-09

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257641, 257649, 257650, H01L 2358

Patent

active

055064434

ABSTRACT:
A multilayer insulating film of a semiconductor device, where the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1.times.10.sup.20 atoms/cm.sup.3 or more.

REFERENCES:
patent: 4161743 (1979-07-01), Yonezawa et al.

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