Multilayer film with stack of nanometer-scale thicknesses

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C257S211000, C438S128000, C438S598000, C438S623000, C977S932000

Reexamination Certificate

active

07847368

ABSTRACT:
This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.

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