Coherent light generators – Particular resonant cavity – Specified cavity component
Patent
1996-04-25
1998-03-17
Healy, Brian
Coherent light generators
Particular resonant cavity
Specified cavity component
372 43, 372 50, 372 92, 372 96, 437129, H01S 308, H01L 2120
Patent
active
057295670
ABSTRACT:
First and second layers are alternately laminated on the semiconductor substrate, providing a multilayer structure in which the resultant residual stress in the layered structure is significantly decreased. One embodiment of the invention is applied to a vertical cavity surface emitting laser having a dielectric multilayer mirror comprised of pairs of a first layer (SiO.sub.2 layer) and a second layer (TiO.sub.2 layer). Each layer has a prescribed thickness and is formed by deposition on a semiconductor (GaAs) substrate. When the layers are deposited on the semiconductor substrate, the first layer is preferably formed to exhibit a residual compressive stress, while the second layer is preferably formed to exhibit a residual tensile stress having a magnitude that is equal to or almost equal to the residual compressive stress of the first layer.
REFERENCES:
patent: 5063569 (1991-11-01), Xie
patent: 5216684 (1993-06-01), Wang et al.
patent: 5244749 (1993-09-01), Bean et al.
patent: 5263040 (1993-11-01), Hayakawa
patent: 5295147 (1994-03-01), Jewell et al.
patent: 5337326 (1994-08-01), Kan et al.
patent: 5341390 (1994-08-01), Yamada et al.
patent: 5363392 (1994-11-01), Kasukawa et al.
patent: 5412680 (1995-05-01), Swirhun et al.
patent: 5561680 (1996-10-01), Haberern et al.
Kinoshita, Susumu et al., "GaAl As/GaAs Surface Emitting Laser with High Reflective TiO.sub.2 /SiO.sub.2 Multilayer Bragg Reflector" Japanese Journal of Applied Physics, vol. 26, No. 3, Mar. 1987, pp. 410-415.
Gourley, P. L., et al., "Epitaxial Surface-Emitting Laser on a Lattice-Mismatched Substrate", Applied Physics Letters, vol. 60, No. 17, Apr. 27, 1992, New York, pp. 2057-2059.
Chua, C. L. "Dielectrically-Bonded Long Wavelength Vertical Cavity Laser on GaAs Substrates Using Strain-Compensated Multiple Quantum Wells", IEEE Photonics Technology Letters, vol. 6, No. 12, Dec. 1994, New York, pp. 1400-1402.
Park, Seoung-Hwan et al., "Strain-Compensated InGaAs/In GaAsP Quantum Well Lasers Lattice Matched to GaAs", Applied Physics Letters, vol. 66, No. 2, Jan. 1995, pp. 201-203.
Takiguchi, T. et al., "Improvement of Crystal Quality and Laser Characteristics by Zero Net Strain Structure", Journal of Crystal Growth, vol. 145, Noss 1-4, Amsterdam, pp. 892-897. No Date.
Tamanuki, Takemasa et al., "Temperature Characteristics of Short-Cavity AlGaAs/GaAs Surface Emitting Lasers", IEICE Transactions, vol. E 74, No. 11, pp.3867-3869. No Date.
Healy Brian
Hewlett--Packard Company
LandOfFree
Multilayer film structure and vertical cavity surface emitting l does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multilayer film structure and vertical cavity surface emitting l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer film structure and vertical cavity surface emitting l will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-964847