Multilayer contact apparatus and method

Details Multilayer contact apparatus and method Multilayer contact apparatus and method

1987-02-09

1989-03-14

Edlow, Martin H.

357 16, H01L 2980

Patent

active

048128864

ABSTRACT:
A multilayer contact is shown in a heterojunction device. One contact extends through two or more vertical, conducting layers. Two contacts deposited on a common surface. Each contact separately bias different layers beneath the surface. A Schottky barrier between the contacts establishes a depletion region that electrically controls the current flow path between the contacts.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4455564 (1984-06-01), Delagebeaudeuf et al.
patent: 4471367 (1984-09-01), Chen et al.
patent: 4558337 (1985-12-01), Loumier
Bonnefoi, et al., Resonant Tunneling Transistors with Controllable Negative Differential Resistance, IEEE Electron Device Letters, vol. 6, No. 12, Dec. 1985.
N. Cirillo, et al., Self-Aligned Modulation-Doped (Al,Ga) As/GaAs Field Effect Transistors, Electron Device Letters.
R. Thorne, et al., Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect Transistors, Japanese Journal of Applied Physics, vol. 21, No. 4, Apr. 1982.
Woodward, et al., Experimental Realization of a Resonant Tunneling Transistor, General Physics Advance Abstracts, vol. 3, No. 3, Feb. 1987.
S. Long, et al., High Speed GaAs Integrated Circuits, IEEE Proceedings, vol. 70, No. 1, Jan. 1982.
R. Fischer, et al., New High-Speed (Al/Ga) As Modulation Doped Field-Effect Transistors, IEEE Circuits and Devices Magazine, Jul. 1985.
S. Lee, et al., Parasitic Source and Drain Resistance in High-Electron-Mobility Transistors, Solid-State Electronics, vol. 28, No. 7, 1985.

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