Multilayer chip varistor and electronic component

Electrical resistors – Resistance value responsive to a condition – Current and/or voltage

Reexamination Certificate

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C338S021000

Reexamination Certificate

active

07911317

ABSTRACT:
A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face3and an outermost internal electrode layer11A is smaller than a thickness between an internal electrode layer21and the outermost internal electrode layer11A, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LE1is efficiently transferred to the outermost internal electrode layer11A having a high thermal conductivity. Furthermore, in the multilayer chip varistor V1of an electronic component EC1, the outermost internal electrode layer11A has a first internal electrode13electrically connected to a first connection electrode7and a first terminal electrode5through first through-hole conductors17, and a second internal electrode15electrically connected to a second connection electrode8and a second terminal electrode6through second through-hole conductors27. Because of this configuration, heat H generated from the semiconductor light emitting device LE1is transferred to both the first internal electrode13and the second internal electrode15, so as to be transferred to the first through-hole conductors17and the second through-hole conductors27. This leads to well-balanced transfer of heat to the first through-hole conductors17and the second through-hole conductors27.

REFERENCES:
patent: 5155464 (1992-10-01), Cowman et al.
patent: 6184769 (2001-02-01), Nakamura et al.
patent: 6385034 (2002-05-01), Tanaka
patent: 6873513 (2005-03-01), Anthony
patent: A-2002-246207 (2002-05-01), None

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