Multilayer antifuse with intermediate spacer layer

Details Multilayer antifuse with intermediate spacer layer Multilayer antifuse with intermediate spacer layer

1994-05-27

1996-04-23

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, active junction...

257530, H01L 2904, H01L 31036

Patent

active

055106293

ABSTRACT:
A method and structure for an improved antifuse in an integrated circuit having a sacrificial layer under a programming layer which forces a conductive link upon programming to be formed away from corner regions of the via structures. The method includes the unique step of forming an improved aperture or via with sides through an inter dielectric layer where the antifuse is to be located. The improved aperture or via exposes a portion of a metal interconnection line through a portion of sacrificial layer located away from the inter dielectric layer sides. Such improved method of forming the antifuse also provides a superior antifuse structure.

REFERENCES:
patent: 3675090 (1972-07-01), Neale
patent: 5381035 (1995-01-01), Chen et al.

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