Multilayer anti-reflective coating for semiconductor...

Details Multilayer anti-reflective coating for semiconductor... Multilayer anti-reflective coating for semiconductor...

2007-10-23

2007-10-23

Geyer, Scott B. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

C257SE21575

Reexamination Certificate

active

11059842

ABSTRACT:
An interconnect structure has a dielectric layer having a dielectric constant less than 3.9 overlying a substrate with a conductive region, a silicon oxycarbide layer overlying the dielectric layer, and a silicon oxynitride layer overlying the silicon oxycarbide layer. A conductive layer is inlaid the silicon oxynitride layer, the silicon oxycarbide layer and the dielectric layer to electrically connect to the conductive region.

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