Multilayer amorphous silicon antifuse

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257 50, 257 52, 257 57, 257209, 438600, H01L 2904, H01L 2710, H01L 2900

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057264848

ABSTRACT:
Antifuses are provided which include first and second conductive layers and an antifuse layer positioned between the first and second conductive layers. The antifuse layer includes at least one oxide layer positioned between two amorphous silicon layers. Interconnect structures and programmable logic devices are also provided which include the antifuses.

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