Multilayer aluminum-containing interconnection structure of semi

Details Multilayer aluminum-containing interconnection structure of semi Multilayer aluminum-containing interconnection structure of semi

1992-10-13

1994-04-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Emitter region feature

257763, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

053069528

ABSTRACT:
In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum-containing interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first interconnection layer is electrically connected to a second interconnection layer through a connection hole. The second interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.

REFERENCES:
patent: 4926237 (1990-05-01), Sun et al.
patent: 4933743 (1990-06-01), Thomas et al.
patent: 5202579 (1993-04-01), Fujii et al.
Nishida et al., "Multilevel Interconnection for Half-Micron ULSI'S", 1989 IEEE VMIC Conference, pp. 19-25.
Abe et al., "High Performance Multilevel Interconnection System with Stacked Interlayer Dielectrics by Plasma CVD and BIAS Sputtering", 1989 IEEE VMIC Conference, pp. 404-410.
Tomioka et al., "A New Reliability Problem Associated with Ar Ion Sputtering Cleaning of Interconnect Vias", 1989 IEEE/IRPS, pp. 53-58.

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