Multijunction photovoltaic cell grown on high-miscut-angle...

Details Multijunction photovoltaic cell grown on high-miscut-angle... Multijunction photovoltaic cell grown on high-miscut-angle...

2003-04-14

2010-10-12

Barton, Jeffrey T (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S262000

Reexamination Certificate

active

07812249

ABSTRACT:
The present invention provides a photovoltaic cell comprising a GaInP subcell comprising a disordered group-III sublattice, a Ga(In)As subcell disposed below the GaInP subcell, and a Ge substrate disposed below the Ga(In)As subcell comprising a surface misoriented from a (100) plane by an angle from about 8 degrees to about 40 degrees toward a nearest (111) plane.

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A.A. Baski et al, “The structure of silicon surfaces from (001) to (111)”, Surf. Sci., 392, 69-85. (1997).
T. Suzuki, A. Gomyo. and Sumio Iijima, “Sublattice Ordering in GaInP and AlGaInP: Effects of Substrate Orientation,”J. Crystal Growth99 (1990), pp. 60-67.
S. R. Kurtz, J. M. Olson, D. J. Arent, A. E. Kibbler, and K. A. Bertness, “Competing Kinetic and Thermodynamic Processes in the Growth and Ordering of Ga0.5In0.5P,”Mat. Res. Soc. Symp. Proc., vol. 312, Materiels Research Society, Warrendale, PA (1993).
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