Multijunction gallium aluminum arsenide-gallium arsenide-germani

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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148174, 148175, 357 16, 357 30, 357 58, H01L 3106

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active

041287339

ABSTRACT:
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium arsenide substrate, and the deposition of a layer of germanium establishes a second PN junction in Ge of a different bandgap energy on the other side of the GaAs substrate. The two PN junctions are responsive respectively to different wavelength ranges of solar energy to thus enhance the power output capability of a single wafer (substrate) solar cell. Utilization of the Group IV element germanium, as contrasted to compound semiconductors, simplifies the process control requirements relative to known prior art compound semiconductor processes, and germanium also provides a good crystal lattice match with gallium arsenide and thereby maximizes process yields. This latter feature also minimizes losses caused by the crystal defects associated with the interface between two semiconductors.

REFERENCES:
patent: 3368125 (1968-02-01), Pasierb
patent: 3376163 (1968-04-01), Abrahamsohn
patent: 3990101 (1976-11-01), Ettenberg et al.
patent: 4017332 (1977-04-01), James
patent: 4072541 (1978-02-01), Meulenberg, Jr. et al.

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