Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer
Patent
1977-12-27
1978-12-05
Mack, John H.
Batteries: thermoelectric and photoelectric
Thermoelectric
Radiation pyrometer
148174, 148175, 357 16, 357 30, 357 58, H01L 3106
Patent
active
041287339
ABSTRACT:
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium arsenide substrate, and the deposition of a layer of germanium establishes a second PN junction in Ge of a different bandgap energy on the other side of the GaAs substrate. The two PN junctions are responsive respectively to different wavelength ranges of solar energy to thus enhance the power output capability of a single wafer (substrate) solar cell. Utilization of the Group IV element germanium, as contrasted to compound semiconductors, simplifies the process control requirements relative to known prior art compound semiconductor processes, and germanium also provides a good crystal lattice match with gallium arsenide and thereby maximizes process yields. This latter feature also minimizes losses caused by the crystal defects associated with the interface between two semiconductors.
REFERENCES:
patent: 3368125 (1968-02-01), Pasierb
patent: 3376163 (1968-04-01), Abrahamsohn
patent: 3990101 (1976-11-01), Ettenberg et al.
patent: 4017332 (1977-04-01), James
patent: 4072541 (1978-02-01), Meulenberg, Jr. et al.
Fraas Lewis M.
Knechtli Ronald C.
Zanio Kenneth R.
Bethurum William J.
Hughes Aircraft Company
MacAllister W. H.
Mack John H.
Weisstuch Aaron
LandOfFree
Multijunction gallium aluminum arsenide-gallium arsenide-germani does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multijunction gallium aluminum arsenide-gallium arsenide-germani, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multijunction gallium aluminum arsenide-gallium arsenide-germani will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-287840