Multigate Schottky diode

Details Multigate Schottky diode Multigate Schottky diode

2007-11-21

2010-12-14

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S270000, C257S280000, C257S281000, C257S473000

Reexamination Certificate

active

07851830

ABSTRACT:
A multigate Schottky diode comprisingan electrically conducting active semiconductor region;first and second electrically connected metallic contact arms on the active semiconductor region forming ohmic contacts therewith;the ohmic contacts being spaced apart on the active semiconductor region to define a gate receiving channel therebetween.a plurality of electrically connected metallic gate fingers, the metallic gate fingers being in contact with the active semiconductor region to form Schottky junctions, the Schottky junctions being spaced apart on the active semiconductor region and extending at least partially along the gate receiving channel.

REFERENCES:
patent: 4701996 (1987-10-01), Calviello
patent: 5814832 (1998-09-01), Takeda et al.
patent: 5945701 (1999-08-01), Siergiej et al.
patent: 6501145 (2002-12-01), Kaminski et al.
patent: 6855981 (2005-02-01), Kumar et al.
patent: 7304336 (2007-12-01), Cheng et al.
patent: 2005/0263799 (2005-12-01), Nakatsuka et al.
patent: 58201375 (1982-05-01), None
patent: 9223703 (1996-02-01), None
Search Report dated Mar. 22, 2008 for Application No. GB0722813.3.

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