Multifunctional metallic bonding

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S455000

Reexamination Certificate

active

11447863

ABSTRACT:
Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6287882 (2001-09-01), Chang et al.
patent: 6335263 (2002-01-01), Cheung et al.
patent: 6418999 (2002-07-01), Yanagita et al.
patent: 6566235 (2003-05-01), Nishida et al.
patent: RE38466 (2004-03-01), Inoue et al.
patent: 7180093 (2007-02-01), Takayama et al.
patent: 2001/0055854 (2001-12-01), Nishida et al.
patent: 2002/0014630 (2002-02-01), Okazaki et al.
patent: 2002/0131682 (2002-09-01), Nasiri et al.
patent: 2003/0077885 (2003-04-01), Aspar et al.
patent: 2003/0168664 (2003-09-01), Hahn et al.
patent: 2004/0033638 (2004-02-01), Bader et al.
patent: 2004/0058537 (2004-03-01), Yanagita et al.
patent: 2004/0222500 (2004-11-01), Aspar et al.
patent: 0 858 110 (1998-08-01), None
patent: 1 168 460 (2002-01-01), None
patent: WO 01/91195 (2001-11-01), None
patent: WO 02/33760 (2002-04-01), None
patent: WO 02/084622 (2002-10-01), None
patent: WO 02/084722 (2002-10-01), None
V. Härle et al., “GaN-Based LEDs and Lasers on SiC,” Physica Status Solidi (a), vol. 180, Issue 1, pp. 5-13 (2000) (abstract only).
T. Mukai, “Recent Progress in Group-III Nitride Light-Emitting Diodes,” IEEE Journal on Selected Topics in Quantum Electronics, vol. 8, No. 2, pp. 264-270 (2002).
K. Streubel et al., “High Brightness AlGaInP Light-Emitting Diodes,” IEEE Journal on Selected Topics in Quantum Electronics, vol. 8, No. 2, pp. 321-332 (2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multifunctional metallic bonding does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multifunctional metallic bonding, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multifunctional metallic bonding will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3810194

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.