Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-03-13
2007-03-13
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000
Reexamination Certificate
active
10744867
ABSTRACT:
Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by dint of non-destructive mechanical release.
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Kerdiles Sébastien
Letertre Fabrice
Morales Christophe
Moriceau Hubert
Commissariat à l'Energie Atomique (CEA)
S.O.I.Tec Silicon on Insulator Technologies S.A.
Tran Thanh Y.
Winston & Strawn LLP
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