Multifinger carbon nanotube field-effect transistor

Details Multifinger carbon nanotube field-effect transistor Multifinger carbon nanotube field-effect transistor

2008-01-28

2011-10-18

Shingleton, Michael (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S236000, C977S742000, C977S936000

Reexamination Certificate

active

08039870

ABSTRACT:
A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.

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