Multidrain metal-oxide-semiconductor field-effect

Details Multidrain metal-oxide-semiconductor field-effect Multidrain metal-oxide-semiconductor field-effect

1978-12-04

1980-08-26

Wojciechowicz, E.

357 23, 357 41, 357 36, H01L 2980

Patent

active

042198283

ABSTRACT:
A metal-oxide-semiconductor field-effect device for constituting a single logic inverter stage. It includes a multidrain transistor operating in enhancement mode and a load transistor, both of monochannel metal-oxide-semiconductor structure. The inverter transistor comprises a single gate region and several drain regions. The single gate region and the single channel region of the inverter multidrain transistor are superimposed on both implantation planes separated by a thin insulating layer, entirely surround each drain region of the inverter multidrain transistor and are entirely surrounded by the single source region of the inverter multidrain transistor.

REFERENCES:
patent: 4015278 (1977-03-01), Fukuta

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