Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-09-05
1998-06-02
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257241, 257249, H01L 27148, H01L 29768
Patent
active
057604312
ABSTRACT:
A multidirectional charge transfer device configured in a charge storage medium. The device includes an array of charge storage regions. Each of said charge storage regions includes a plurality of first gates, each of which is arranged in a first portion of each charge storage region, a plurality of second gates, each of which is arranged in a second portion of each charge storage region, a plurality of third gates, each of which is arranged in a third portion of each charge storage region, and a plurality of fourth gates, each of which is arranged in a fourth portion of each charge storage region. The plurality of gates and charge storage regions are configured to define at least three bidirectional charge transfer paths which are noncollinear with respect to each other. The plurality of gates are sequentially biased to establish charge transfer along one of said bidirectional charge transfer paths and forming blocking potentials to charge transfer in the remaining charge transfer paths.
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IEEE Transactions on Electron Devices, vol. 41, No. 16, Dec. 1994, "An Orthogonal-Transfer CCD Imager" by B. E. Burke, R. K. Reich, E. D. Savoye and J. L. Tonry.
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Burke Barry E.
Savoye Eugene D.
Tonry John
Massachusetts Institute of Technology
Ngo Ngan V.
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