Multicrystalline silicon substrate and process for...

Stock material or miscellaneous articles – Composite – Of silicon containing

Reexamination Certificate

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C428S141000, C136S256000, C136S258000, C216S079000, C216S099000

Reexamination Certificate

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07128975

ABSTRACT:
A surface of a multicrystalline silicon substrate is etched with an alkaline aqueous solution in a condition so that a surface area-to-planar surface area ratio R is smaller than 1.1. A multiplicity of fine textures are formed over the irregularities by dry etching. This allows fine textures to be formed uniformly, and a solar cell with high efficiency can thus be produced.

REFERENCES:
patent: 4229233 (1980-10-01), Hansen et al.
patent: 6156968 (2000-12-01), Nishimoto et al.
patent: 6207890 (2001-03-01), Nakai et al.
patent: 6663944 (2003-12-01), Park et al.
patent: 09-102625 (1997-04-01), None

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