Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-10-25
1997-07-08
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 22, 257184, 257440, H01L 2906
Patent
active
056464215
ABSTRACT:
A quantum well intersubband infrared (IR) photodetector has a spectral response tunable by an external voltage. The photodetector consists of multiple doped quantum wells with different well widths and barrier heights. The preferred embodiment is made by repeating the whole structure of the active region of a multiple quantum well intersubband IR photodetector. Differences between repeats or groups of well widths and barrier heights result in differences in the spectral IR response of the different repeats. The device resistance of a given group is designed to be very different from those for all the other groups. As a function of an applied voltage, the repeat with the highest resistance will be turned on to detect IR with the response peak at a wavelength .lambda..sub.1. Subsequently, the next highest resistance repeat will turn on when increasing voltage with its response peaked at .lambda..sub.2, and so on. Since .lambda..sub.1, .lambda..sub.2 are different from each other, a voltage tunable multicolor photodetector is realized.
REFERENCES:
patent: 5077593 (1991-12-01), Sato et al.
patent: 5285080 (1994-02-01), Abe et al.
Whitehead et al., "Effects of well width on the characteristics of GsSs/AlGaAs multiple quantum well elctroabsorption modulators", Appl. Phys. Lett. 53(11), 956-95 Sep. 1988.
Jackson Jerome
Kelley Nathan K.
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