Multichip press-contact type semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

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Details

257727, 257178, 257181, 257182, 257718, 257688, 257785, H01L 2974, H01L 2348, H01L 2316

Patent

active

058669442

ABSTRACT:
In the present invention, by virtue of heat buffer plates respectively located on the major surfaces of IGBT chips and FRD chips arranged in a single plane, the total thickness of each chip and a corresponding one of the heat can be set to a substantially predetermined value. A thickness-correcting member having elongated projections corresponding to the chips is provided on those surfaces of the heat buffer plates which is remote from the chips. A heat buffer disk plate is provided on those surfaces of the chips which are opposite to the major surfaces thereof. The thickness-correcting member, the heat buffer plates and the IGBT and FRD chips are held and simultaneously pressed between an emitter press-contact electrode plate and a collector press-contact electrode plate. Before using the device, a force of press, which is higher than that applied at the time of using the device and can plastically deform the thickness-correcting member, is applied to the emitter press-contact electrode plate and the collector press-contact electrode plate, thereby correcting variations in total thickness of each semiconductor chip and a corresponding one of the heat buffer plates.

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patent: 5360984 (1994-11-01), Kirihata
patent: 5360985 (1994-11-01), Hiyoshi et al.
patent: 5459356 (1995-10-01), Schulze et al.
patent: 5469103 (1995-11-01), Shigekane

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