Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Patent
1996-06-19
1999-02-02
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
257727, 257178, 257181, 257182, 257718, 257688, 257785, H01L 2974, H01L 2348, H01L 2316
Patent
active
058669442
ABSTRACT:
In the present invention, by virtue of heat buffer plates respectively located on the major surfaces of IGBT chips and FRD chips arranged in a single plane, the total thickness of each chip and a corresponding one of the heat can be set to a substantially predetermined value. A thickness-correcting member having elongated projections corresponding to the chips is provided on those surfaces of the heat buffer plates which is remote from the chips. A heat buffer disk plate is provided on those surfaces of the chips which are opposite to the major surfaces thereof. The thickness-correcting member, the heat buffer plates and the IGBT and FRD chips are held and simultaneously pressed between an emitter press-contact electrode plate and a collector press-contact electrode plate. Before using the device, a force of press, which is higher than that applied at the time of using the device and can plastically deform the thickness-correcting member, is applied to the emitter press-contact electrode plate and the collector press-contact electrode plate, thereby correcting variations in total thickness of each semiconductor chip and a corresponding one of the heat buffer plates.
REFERENCES:
patent: 4918514 (1990-04-01), Malsnda et al.
patent: 4958215 (1990-09-01), Kojima et al.
patent: 4996586 (1991-02-01), Matsuda et al.
patent: 5140406 (1992-08-01), Matsuda et al.
patent: 5221851 (1993-06-01), Gobrecht et al.
patent: 5250821 (1993-10-01), Ferla et al.
patent: 5360984 (1994-11-01), Kirihata
patent: 5360985 (1994-11-01), Hiyoshi et al.
patent: 5459356 (1995-10-01), Schulze et al.
patent: 5469103 (1995-11-01), Shigekane
Fujiwara Takashi
Hiyoshi Michiaki
Matsuda Hideo
Fahmy Wael
Kabushiki Kaisha Toshiba
Williams Alexander Oscar
LandOfFree
Multichip press-contact type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multichip press-contact type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multichip press-contact type semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1120088