Multichannel junction field-effect transistor and process

Details Multichannel junction field-effect transistor and process Multichannel junction field-effect transistor and process

1969-03-27

1976-06-29

Larkins, William D.

Metal treatment

Stock

Ferrous

29571, 29580, 148175, 357 22, 357 15, 357 36, 357 41, 357 56, H01L 2178, H01L 2726

Patent

active

039673057

ABSTRACT:
A single gate field-effect transistor including a semi-insulating substrate for providing a one-sided device geometry, an isolating mesa formed from a layer of semi-conductor material provided on a substrate surface and which exhibits bulk negative resistance instabilities above a critical electric field strength, an extended gate structure provided in a gate region of the mesa, source and drain structures provided on the mesa at opposite sides of the gate structure, and electrical leads connected respectively to the gate, source and drain structures. The process for making the transistor, a multichannel (interdigitated structure) version, and a closed geometry (without mesa) version are also detailed.

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Petzinger et al., "CW Three-terminal GaAs Oscillator", IEEE Trans. Electron Devices, July 1967, pp. 403-404.
Hooper et al., "An Epitaxial GaAs Field Effect Transitor", IEEE Proceedings, pp. 1237-1238, July 1967.
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